Laser crystallizing apparatus

ABSTRACT

Provided is a laser crystallizing apparatus including a laser generator generating a laser beam and an optical system photo-converting the laser beam to make a converted laser beam. A beam transmitting unit includes a passage through which the converted laser beam is transmitted into the chamber. The beam transmitting unit includes a chamber window provided on the chamber to transmit the laser beam, and a shield window movably disposed below the chamber window to prevent a material generated in the chamber from reaching the chamber window.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. §119 to Korean PatentApplication No. 10-2015-0121077 filed in the Korean IntellectualProperty Office on Aug. 27, 2015, the disclosure of which isincorporated by reference herein in its entirety.

1. Technical Field

Exemplary embodiments of the present invention relate to an apparatus,and more particularly to a laser crystallizing apparatus.

2. Discussion of Related Art

A laser crystallizing apparatus may include a laser generator, an energysource, an optical system emitting a laser beam, and a chamber which maybe a space where a substrate is crystallized by the laser beam emittedfrom the optical system.

The laser beam emitted from the optical system may be input to thechamber and the substrate in the chamber may be crystallized. Thechamber may include a chamber window (e.g., an anneal window). In thechamber window, relatively high beam transmittance may reduce energyloss of the laser, and a relatively large thickness may tolerate adifference between internal pressure and external pressure of thechamber.

A temperature of the substrate melted by the laser beam may momentarilyincrease up to a melting point (e.g., about 1,300° C. or more in thecase of silicon (Si)), and a substrate surface material may beevaporated and may be deposited on a chamber window surface. In the caseof a flexible substrate, a hume may contaminate the chamber window.

When the lower portion of the chamber window is contaminated, thetransmittance of the laser beam may be reduced and thus the beam energyreaching the substrate may be reduced, and an energy shortage phenomenonmay occur. A degree of contamination may vary for each position and aline stain defect according to energy non-uniformity may be generated.Thus, the chamber window may be replaced relatively frequently, and anatmosphere in the chamber may be broken and particles may be generatedwhen the chamber window is replaced.

SUMMARY

Exemplary embodiments of the present invention may provide a lasercrystallizing apparatus reducing or eliminating contamination of achamber window and substantially uniformly crystallizing a target thinfilm on a substrate. The laser crystallizing apparatus according to anexemplary embodiment of the present invention may include a shieldwindow below the chamber window.

An exemplary embodiment of the present invention provides a lasercrystallizing apparatus including a laser generator generating a laserbeam and an optical system photo-converting the laser beam to make aconverted laser beam. A beam transmitting unit includes a passagethrough which the converted laser beam is transmitted into the chamber.The beam transmitting unit includes a chamber window provided on thechamber to transmit the laser beam, and a shield window movably disposedbelow the chamber window to prevent a material generated in the chamberfrom reaching the chamber window.

The beam transmitting unit may include a shield mask in which an openregion through which the laser beam passes is formed. A target substrateon which a target thin film is formed may be disposed in the chamber.

The shield mask unit may include two or more open regions formed on apath where the laser beam is transmitted to the inside of the chamberand a path where the laser beam is transmitted to the outside of thechamber, respectively.

The shield mask may include aluminum (Al) or stainless steel (SUS).

The shield window may include quartz.

The shield window may be movable in a vertical direction with respect toa length direction of the chamber window.

An edge of the shield window may be supported by a jig, and the jig maybe movable by driving a linear motor supporting the jig.

The laser beam may be a linear laser beam having a long axis of fromabout 200 mm to about 3,000 mm and a short axis of from about 0.1 mm toabout 20 mm.

The laser beam may be transmitted into the chamber window at an angle offrom about 1° to about 10° with respect to a bottom surface of thechamber window.

The shield window may have a polygonal column shape having an evennumber of surfaces.

The beam transmitting unit may further include a shield mask in which anopen region through which the laser beam passes is formed.

The shield window may be rotatable.

The shield window may have any one shape of a hexagon, an octagon, and adecagon.

The shield window may be disposed on a path where the laser beam istransmitted into the chamber and a path where the laser beam istransmitted to the outside of the chamber, respectively.

According to an exemplary embodiment of the present invention, theshield window may be movable or rotatable, and thus it may be possibleto use the chamber window substantially without replacement of thechamber window.

According to an exemplary embodiment of the present invention, theshield window may be a planar or polygonal shield window which may beused multiple times, and thus the chamber may be used for a relativelylong period of time without opening the chamber.

According to an exemplary embodiment of the present invention, afrequency of replacement of the chamber window may be reduced andreplacement costs of the chamber window may be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram schematically illustrating a laser crystallizingapparatus according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view schematically illustrating a beamtransmitting unit in a laser crystallizing apparatus according to anexemplary embodiment of the present invention.

FIG. 3 is a plan view schematically illustrating a beam transmittingunit in a laser crystallizing apparatus according to an exemplaryembodiment of the present invention.

FIG. 4 is a perspective view schematically illustrating a beamtransmitting unit in a laser crystallizing apparatus according to anexemplary embodiment of the present invention.

FIG. 5 is a cross-sectional view schematically illustrating a beamtransmitting unit in a laser crystallizing apparatus according to anexemplary embodiment of the present invention.

FIG. 6 is a cross-sectional view schematically illustrating a beamtransmitting unit in a laser crystallizing apparatus according to anexemplary embodiment of the present invention.

DETAILED DESCRIPTION

Exemplary embodiments of the present invention will be described in moredetail below with reference to the accompanying drawings, in whichexemplary embodiments of the present invention are shown. As thoseskilled in the art would realize, the described exemplary embodiments ofthe present invention may be modified in various different ways, allwithout departing from the spirit or scope of the present invention.

Like reference numerals may refer to like elements throughout thespecification and drawings.

The drawings may be schematic drawings, and might not illustrateexemplary embodiments of the present invention in accordance to scale.Relative dimensions and ratios of portions in the drawings may beexaggerated or reduced in size for clarity of description in thespecification and drawings. It will be understood that when an elementsuch as a layer, film, region, or substrate is referred to as being “on”another element, it may be directly on the other element or interveningelements may be present.

As those skilled in the art would realize, the described embodiments maybe modified in various different ways, all without departing from thespirit or scope of the present invention.

A laser crystallizing apparatus according to an exemplary embodiment ofthe present invention will be described in more detail below withreference to FIGS. 1 to 4.

FIG. 1 is a diagram schematically illustrating a laser crystallizingapparatus according to an exemplary embodiment of the present invention.FIG. 2 is a cross-sectional view schematically illustrating a beamtransmitting unit in a laser crystallizing apparatus according to anexemplary embodiment of the present invention. FIG. 3 is a plan viewschematically illustrating a beam transmitting unit in a lasercrystallizing apparatus according to an exemplary embodiment of thepresent invention. FIG. 4 is a perspective view schematicallyillustrating a beam transmitting unit in a laser crystallizing apparatusaccording to an exemplary embodiment of the present invention.

Referring to FIG. 1, a laser crystallizing apparatus 100 according to anexemplary embodiment of the present invention may include a lasergenerator 10 generating a laser beam L, an optical system 20photo-converting the laser beam L to make the converted laser beam L,and a beam transmitting unit 40 forming a passage through which thelaser beam L may be transmitted into a chamber 30 where a targetsubstrate 60 on which a target thin film 70 is formed is positioned. Thetarget substrate 60 may be mounted on a stage 50.

The laser beam L generated in the laser generator 10 may include Ppolarization and S polarization. The laser beam L may be photo-convertedin the optical system 20 to an excimer laser beam. The excimer laserbeam may induce a phase shift of the target thin film 70. The excimerlaser beam may crystallize the target thin film 70 formed on the targetsubstrate 60. The target thin film 70 may be an amorphous silicon layerand may be formed by a method such as a lower pressure chemicaldeposition method, a normal pressure chemical deposition method, aplasma enhanced chemical vapor deposition (PECVD) method, a sputteringmethod, or a vacuum evaporation method.

The optical system 20 may include at least one half wave plate (HWP).The at least one HWP may shift a polarization axis direction of thelaser beam L generated by the laser generator 10, and may include atleast one mirror substantially fully reflecting the laser beam L. Theoptical system 20 may include at least one polarization beam splitter(PBS). The at least one PBS may reflect a part of the laser beam L andmay transmit the other part of the laser beam L.

In the chamber 30, an atmosphere such as nitrogen (N₂), air, and mixedgas may vary according to a process performed in the chamber 30, oraccording to a users' preferences. Pressure in the chamber 30 may varyaccording to a depressurized, pressurized, or vacuum state. Thus, thechamber 30 might not be an open type chamber. The chamber 30 may be aclosed type chamber, which may be isolated from external air.

FIG. 2 is a cross-sectional view schematically illustrating a beamtransmitting unit in the laser crystallizing apparatus according to theexemplary embodiment of the present invention. Referring to FIG. 2, thebeam transmitting unit 40 may include a chamber window 41 and a shieldwindow 42. The laser beam L emitted through the optical system 20 may beinput to the chamber 30 and thus the target thin film 70 in the chamber30 may be crystallized. The chamber window (e.g., annealing window) 41may serve as a medium through which the laser beam L may be input to thechamber 30. The chamber window 41 may be provided on the chamber 30 andmay cover an opening on the chamber 30 through which the laser beam Lpasses.

The chamber window 41 may have a cuboid shape having a bottom surface.In the chamber window 41, a relatively high beam transmittance mayreduce or eliminate energy loss of the laser beam L. The chamber window41 may have a relatively large thickness and thus the chamber window 41may tolerate a difference between internal pressure and externalpressure of the chamber 30. The chamber window 41 may include quartzwith a thickness of several cm.

The shield window 42 may be movably disposed below the chamber window41. The shield window 42 may prevent a material generated in the chamber30 from reaching the chamber window 41. The shield window 42 may preventa contaminative material P from being absorbed in the chamber window 41.The shield window may be moved without replacing the chamber window 41,and thus when a portion of the shield window 42 is contaminated, theshield window 42 may be moved. Thus, shield window 42 may be usedseveral times without being replaced. For example, the shield window 42may be moved from side to side with respect to an open region 44 of theshield mask 43 after the contaminative material P is absorbed by aportion of the shield window 42.

The contamination of the shield window 42 may be determined by measuringan energy drop of the laser beam L input to the chamber 30 anduniformity of the laser beam L. When the contamination reduces theenergy of the laser beam L and uniformity of the laser beam L, theshield window 42 may be moved and the laser beam L may be transmittedthrough a new shield window 42 portion that has not been contaminated.

The chamber window 41 may block the inside of the chamber 30 from theexternal air. The thickness of the chamber window 41 may be relativelylarge and the chamber window 41 may be sealed to the chamber 30 by anO-ring. The shield window 42 may be disposed in the chamber 30, and thusthe thickness of the shield window 42 may be relatively small and theshield window 42 may be moved, as desired. The shield window 42 mayinclude quartz having a relatively high laser beam transmittance.

When viewed from a side of the laser beam L in a short-axial directionof the laser beam L, a range in which the laser beam L passes throughthe chamber window 41 may be relatively small. The laser beam L may havea long axis of from about 200 mm to about 3,000 mm and a short axis offrom about 0.1 mm to about 20 mm. The laser beam L may be transmittedinto the inside of the chamber 30 at an angle of from about 1° to about10° with respect to a bottom surface of the chamber window 41 and may bereflected to the outside of the chamber 30 through the chamber window 41at substantially the same angle at which the laser beam L entered thechamber 30 after reaching the target thin film 70.

The beam transmitting unit 40 may include a shield mask 43 in which theopen region 44 through which the laser beam L may pass is formed. Theopen region 44 may be formed as two regions through which the laser beamL transmitted into the inside of the chamber 30 and the laser beam Lreflected to the outside of the chamber 30 pass, respectively. The openregion 44 may be larger than the short axis of the laser beam L. Theopen region 44 may have a width of from about 1 mm to about 30 mm. Theshield mask 43 may prevent the contaminative material P in the chamber30 from being fully exposed to the shield window 42. The laser beam Lmay pass through only the open region 44 formed in the shield mask 43and the contaminative material P may be deposited on only the shieldwindow 42 portion corresponding to the open region 44.

The shield mask 43 may include aluminum (Al) or stainless steel (SUS)and thus a deformation of the shield mask 43 caused by the laser beam Lmay be relatively small and a generation of particles may be reduced oreliminated.

FIG. 3 is a plan view schematically illustrating a beam transmittingunit in a laser crystallizing apparatus according to an exemplaryembodiment of the present invention. FIG. 4 is a perspective viewschematically illustrating a beam transmitting unit in a lasercrystallizing apparatus according to an exemplary embodiment of thepresent invention.

Referring to FIGS. 3 and 4, the shield window 42 may move in a verticaldirection with respect to a length direction of the chamber window 41.For example, the shield window 42 may move perpendicularly with respectto a relatively longer side of the shield mask 43. An edge of the shieldwindow 42 may be supported by a jig 82. The jig 82 may be fixed to alinear motor 80. The linear motor 80 may include a power source and mayuse electricity to move in a substantially straight line. The jig 82 andthe linear motor 80 may move along a rail 84. The linear motor 80 maymove to a desired position within a relatively short amount of time andmay stop relatively abruptly. Thus, a position control of the shieldwindow may be performed with relatively high speed and relatively highprecision.

Referring to FIG. 3, a region A and a region B of the shield window 42may illustrate regions in which the contaminative material P isdeposited and a region C may illustrate a region in which thecrystallizing process is currently in progress. Two open regions 44 maybe formed in the shield mask 43. The contaminative material P may bedeposited on the shield window 42 in two lines through the open regions44. A trace of the contaminative material P may be formed in the regionA by moving the shield window 42 to a position corresponding with theregion A. The contaminative material P may be generated by performingthe laser crystallizing process. After the laser crystallizing processis performed and the trace of the contaminative material P is formed inthe region A, a trace of the contaminative material P may be formed inthe region B by moving the shield window 42 to a position correspondingwith the region B. Since two open regions 44 may be formed in the shieldmask 43 disposed below the shield window 42, the trace of thecontaminative material P may be formed in two lines.

Referring to FIG. 3, an area in which the crystallizing process may beperformed by movement of the shield window 42 about two times isillustrated. However, according to an exemplary embodiment of thepresent invention, when the size of the shield window 42 is increased,the shield window 42 may be moved and used more than two times.

FIG. 5 is a cross-sectional view schematically illustrating a beamtransmitting unit in a laser crystallizing apparatus according to anexemplary embodiment of the present invention.

Referring to FIG. 5, a shield window 45 may have a polygonal columnshape. The polygonal column shape of the shield window 45 may have aneven number of surfaces. The shield window 45 may rotate along an axisextended in a parallel direction with respect to the length direction ofthe chamber window 41. The shield window 45 may be connected to a motorand the shield window 45 may rotate by driving the motor.

The shield mask 43 in which the open region 44 through which the laserbeam L may pass is formed may be disposed below the shield window 45.Since the shield window 45 may be formed in the polygonal column shapehaving an even number of surfaces, when one side exposed to the openregion 44 of the shield mask 43 is contaminated and the contaminativematerial P is accumulated, another side of the shield window 45 may beexposed to the open region 44 of the shield mask 43 by rotating theshield window 45.

The shield window 45 may have any one shape of a hexagon, an octagon,and a decagon, for example. However, exemplary embodiments of thepresent invention are not limited to a particular number of surfaces ofthe shield window 45. The shield window 45 may include quartz having arelatively high beam transmittance. The shield mask 43 may includealuminum (Al) or stainless steel (SUS) and thus a deformation of theshield mask 43 caused by the laser beam L may be relatively small and ageneration of particles may be reduced or eliminated.

Referring to FIG. 5, shield windows 45 may be disposed on a path wherethe laser beam L is transmitted into the chamber 30 and a path where thelaser beam L is transmitted to the outside of the chamber 30,respectively. Each open region 44 may be formed in the shield mask 43corresponding to each shield window 45. The open region 44 may be alarger width than the short axis of the laser beam L. The open regionmay have a width from about 1 mm to about 30 mm.

FIG. 6 is a cross-sectional view schematically illustrating a beamtransmitting unit in a laser crystallizing apparatus according to anexemplary embodiment of the present invention.

Referring to FIG. 6, when a distance between a path of the laser beam Ltransmitted into the chamber 30 and a path of the laser beam Ltransmitted out of the chamber 30 is relatively small, one shield window46 having a polygonal column shape may pass the laser beam L both intoand out of the chamber 30. The shield mask 43 in which the open region44 through which the laser beam L passes is formed may be disposed belowthe shield window 45. One open region 44 may be formed in the shieldmask 43 corresponding to one shield window 46. The size and the numberof the shield windows 46 may be varied, as desired.

According to an exemplary embodiment of the present invention, theshield window may be movable or rotatable, and thus it may be possibleto use the chamber window substantially without replacement of thechamber window. The shield window may be a planar or polygonal shieldwindow which may be used multiple times, and thus the chamber may beused for a relatively long period of time without opening the chamber. Afrequency of replacement of the chamber window may be reduced andreplacement costs of the chamber window may be reduced.

While the present invention has been shown and described with referenceto the exemplary embodiments thereof, it will be apparent to those ofordinary skill in the art that various changes in form and detail may bemade thereto without departing from the spirit and scope of the presentinvention.

What is claimed is:
 1. A laser crystallizing apparatus, comprising: alaser generator generating a laser beam; an optical systemphoto-converting the laser beam to make a converted laser beam; and abeam transmitting unit including a passage through which the convertedlaser beam is transmitted into a chamber, wherein the beam transmittingunit includes: a chamber window provided on the chamber to transmit thelaser beam, and a shield window movably disposed below the chamberwindow to prevent a material generated in the chamber from reaching thechamber window.
 2. The laser crystallizing apparatus of claim 1,wherein: the beam transmitting unit further includes a shield mask inwhich an open region through which the laser beam passes is formed, andwherein a target substrate on which a target thin film is formed isdisposed in the chamber.
 3. The laser crystallizing apparatus of claim2, wherein: the shield mask includes two or more open regions formed ona path where the laser beam is transmitted to the inside of the chamberand a path where the laser beam is transmitted to the outside of thechamber, respectively.
 4. The laser crystallizing apparatus of claim 2,wherein: the shield mask includes aluminum (Al) or stainless steel(SUS).
 5. The laser crystallizing apparatus of claim 1, wherein: theshield window includes quartz.
 6. The laser crystallizing apparatus ofclaim 1, wherein: the shield window is movable in a vertical directionwith respect to a length direction of the chamber window.
 7. The lasercrystallizing apparatus of claim 1, wherein: an edge of the shieldwindow is supported by a jig, and wherein the jig is moveable by drivinga linear motor supporting the jig.
 8. The laser crystallizing apparatusof claim 1, wherein: the laser beam is a linear laser beam having a longaxis of from about 200 mm to about 3,000 mm and a short axis of fromabout 0.1 mm to about 20 mm.
 9. The laser crystallizing apparatus ofclaim 1, wherein: the laser beam is transmitted into the chamber windowat an angle of from about 1° to about 10° with respect to a bottomsurface of the chamber window.
 10. The laser crystallizing apparatus ofclaim 1, wherein: the shield window has a polygonal column shape havingan even number of surfaces.
 11. The laser crystallizing apparatus ofclaim 10, wherein: the beam transmitting unit further includes a shieldmask in which an open region through which the laser beam passes isformed.
 12. The laser crystallizing apparatus of claim 10, wherein: theshield window is rotatable.
 13. The laser crystallizing apparatus ofclaim 10, wherein: the shield window has any one shape of a hexagon, anoctagon, and a decagon.
 14. The laser crystallizing apparatus of claim10, wherein: two or more shield windows are disposed on a path where thelaser beam is transmitted into the chamber and a path where the laserbeam is transmitted to the outside of the chamber, respectively.
 15. Alaser crystallizing apparatus, comprising: a laser generator configuredto generate a laser beam; a chamber; and a beam transmitting unitdisposed on the chamber, wherein the beam transmitting unit comprises: achamber window disposed on an outer surface of the chamber, wherein thechamber window is configured to transmit the laser beam; a shield maskcomprising at least one open region disposed inside the chamber, whereinthe at least one open region is configured to transmit the laser beam;and a shield window disposed between the shield mask and the chamberwindow, wherein the shield window is configured to absorb one or morecontaminative materials generated inside the chamber, and wherein theshield window is movable to position a plurality of surfaces of theshield windows adjacent to the at least one open region of the shieldmask to absorb the one or more contaminative materials.
 16. The lasercrystallizing apparatus of claim 15, wherein the shield mask includesaluminum (Al) or stainless steel (SUS).
 17. The laser crystallizingapparatus of claim 15, wherein the shield window includes quartz. 18.The laser crystallizing apparatus of claim 15, wherein an edge of theshield window is supported by a jig, and wherein the jig is moveable bydriving a linear motor supporting the jig.
 19. The laser crystallizingapparatus of claim 15, wherein the laser beam is a linear laser beamhaving a long axis of from about 200 mm to about 3,000 mm and a shortaxis of from about 0.1 mm to about 20 mm.
 20. The laser crystallizingapparatus of claim 15, wherein the laser beam is transmitted into thechamber window at an angle of from about 1° to about 10° with respect toa bottom surface of the chamber window.